BALD Engineering – Born in Finland, Born to ALD
Samsung’s GAA Transistor, MBCFET™ aims at Reduced Size and Increased Performance While chipmakers are struggling with the FinFET based chip production below 5 nm process nodes, Samsung has planned to opt for GAA (gate all around) architecture. Samsung’s GAA redesigns the transistor, making it more power-efficient and better-performing than the existing Multi Bridge Channel FET (MBCFET™) that utilize stacked nanosheets. Samsung’s patented MBCFET™ is formed as a nanosheet, allowing for a larger current and simpler device integration. It allows…